STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N65 STF10N65

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066333-STF10N65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066333-STF10N65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N65 - 066333-STF10N65 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N65
066333-STF10N65
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N65 066333-STF10N65
Manufacturer: STMicroelectronics Win Source Part Number: 066333-STF10N65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 066333-STF10N65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066333-STF10N65
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N65
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 35000 milliwatts
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