STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD9N60M2 STD9N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102933-STD9N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 320pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 780 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102933-STD9N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 320pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 780 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD9N60M2 - 1102933-STD9N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD9N60M2
1102933-STD9N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD9N60M2 1102933-STD9N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1102933-STD9N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 320pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 780 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102933-STD9N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 320pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 780 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD9N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD9N60M2
Single FETs, MOSFETs STD9N60M2
MOSFET N-CH 600V 5.5A DPAK

MOSFET N-CH 600V 5.5A DPAK

Supplier's Site Datasheet
Corby, Northants, United Kingdom
MOSFETs
7863628P
MOSFETs 7863628P
MOSFET N-Channel 600V 5.5A DPAK

MOSFET N-Channel 600V 5.5A DPAK

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
7863628
MOSFETs 7863628
MOSFET N-Channel 600V 5.5A DPAK

MOSFET N-Channel 600V 5.5A DPAK

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1686983
MOSFETs 1686983
MOSFET N-Channel 600V 5.5A DPAK

MOSFET N-Channel 600V 5.5A DPAK

Supplier's Site
Single FETs, MOSFETs - 497-13864-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13864-1-ND
Single FETs, MOSFETs 497-13864-1-ND
N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13864-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13864-6-ND
Single FETs, MOSFETs 497-13864-6-ND
N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13864-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13864-2-ND
Single FETs, MOSFETs 497-13864-2-ND
N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Mosfet, N-Ch, 600V, 5.5A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics - 26AH0155 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 5.5A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics
26AH0155
Mosfet, N-Ch, 600V, 5.5A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics 26AH0155
MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD9N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD9N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD9N60M2
MOSFET N-CH 600V 5.5A DPAK

MOSFET N-CH 600V 5.5A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2

MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102933-STD9N60M2 STD9N60M2 7863628P 7863628 497-13864-1-ND 26AH0155 STD9N60M2 STD9N60M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD9N60M2 Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 600V, 5.5A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 650 volts 650 volts
PD 60000 milliwatts 60000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); DPAK (TO-252) TO-252 (DPAK); DPAK (TO-252) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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