MOSFET N-CH 600V 8A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 897934-STD8N60DM2
Series: MDmesh™ DM2
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 600 V 8A (Tc) 85W (Tc) Surface Mount DPAK
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: STD8
Categories: Discrete Semiconductor Products
Case / Package: DPAK
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-16930-2, 497-16930-1, 497-16930-6
N-Channel 600V 8A (Tc) 85W (Tc) Surface Mount DPAK
N-Channel 600V 8A (Tc) 85W (Tc) Surface Mount DPAK
N-Channel 600V 8A (Tc) 85W (Tc) Surface Mount DPAK
MOSFET N-CH 600V 8A DPAK
POWER MOSFET, N CHANNEL, 8A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD8N60DM2 | 897934-STD8N60DM2 | 497-16930-6-ND | STD8N60DM2 | 14AC7528 | STD8N60DM2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD8N60DM2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Power Mosfet, N Channel, 8A, To-252-3; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 8000 milliamps | 8000 milliamps | ||||
| PD | 85000 milliwatts |
