MOSFET N-CH 100V 60A DPAK
N-Ch MOSFET, 100V, 60A, 15mR, DPAK, SMT Product overview: STD70N10F4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 60A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 60A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD70N10F4 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 031159-STD70N10F4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: STD70N10F4
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IPD35N10S3L26ATMA1; NVD6828NLT4G; NVD6828NLT4G-VF01;
Introduction Date: November 12, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
N-Channel 100V 60A (Tc) 125W (Tc) Surface Mount DPAK
N-Channel 100V 60A (Tc) 125W (Tc) Surface Mount DPAK
N-Channel 100V 60A (Tc) 125W (Tc) Surface Mount DPAK
MOSFET, N-CH, 100V, 60A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
N CHANNEL POWER MOSFET, STripFET DeepGATE, 100V, 60A, DPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET N-CH 100V 60A DPAK
(PRICE/TR), MOSFET, N-CH, 100V, 60A, TO-252; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.015OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATIONROHS COMPL. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STD70N10F4 | 719650 | 278-STD70N10F4 | 031159-STD70N10F4 | 497-8806-1-ND | 24AC5420 | 57P0825 | STD70N10F4 | STD70N10F4 | 32265732 |
| Product Name | Single FETs, MOSFETs | MOSFETs | 100V 60A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N10F4 | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 60A, To-252; Transistor Polarity Stmicroelectronics | N Channel Power Mosfet, Stripfet Deepgate, 100V, 60A, Dpak, Full Reel; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||||
| IDSS | 60000 milliamps | 60000 milliamps | 60000 milliamps | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts |
