STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NK50Z-1 STD5NK50Z-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066323-STD5NK50Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 535pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066323-STD5NK50Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 535pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NK50Z-1 - 066323-STD5NK50Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NK50Z-1
066323-STD5NK50Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NK50Z-1 066323-STD5NK50Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 066323-STD5NK50Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 535pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066323-STD5NK50Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 535pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD5NK50Z-1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD5NK50Z-1
Single FETs, MOSFETs STD5NK50Z-1
MOSFET N-CH 500V 4.4A IPAK

MOSFET N-CH 500V 4.4A IPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - STD5NK50Z-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD5NK50Z-1-ND
Single FETs, MOSFETs STD5NK50Z-1-ND
N-Channel 500V 4.4A (Tc) 70W (Tc) Through Hole I-PAK

N-Channel 500V 4.4A (Tc) 70W (Tc) Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD5NK50Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD5NK50Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD5NK50Z-1
MOSFET N-CH 500V 4.4A IPAK

MOSFET N-CH 500V 4.4A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 066323-STD5NK50Z-1 STD5NK50Z-1 STD5NK50Z-1-ND STD5NK50Z-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NK50Z-1 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 70000 milliwatts 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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