STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N52K3 STD4N52K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102893-STD4N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 334pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.6 Ohm @ 1.25A, 10V Alternative Parts (Cross-Reference): FQD3N50CTF; TSM4NB50CP ROG; 2SK2715; Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102893-STD4N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 334pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.6 Ohm @ 1.25A, 10V Alternative Parts (Cross-Reference): FQD3N50CTF; TSM4NB50CP ROG; 2SK2715; Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N52K3 - 1102893-STD4N52K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N52K3
1102893-STD4N52K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N52K3 1102893-STD4N52K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102893-STD4N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 334pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.6 Ohm @ 1.25A, 10V Alternative Parts (Cross-Reference): FQD3N50CTF; TSM4NB50CP ROG; 2SK2715; Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102893-STD4N52K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 2nC @ 10V
Max Input Capacitance: 334pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.6 Ohm @ 1.25A, 10V
Alternative Parts (Cross-Reference): FQD3N50CTF; TSM4NB50CP ROG; 2SK2715;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-10647-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10647-2-ND
Single FETs, MOSFETs 497-10647-2-ND
N-Channel 525V 2.5A (Tc) 45W (Tc) Surface Mount DPAK

N-Channel 525V 2.5A (Tc) 45W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD4N52K3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD4N52K3
Single FETs, MOSFETs STD4N52K3
MOSFET N-CH 525V 2.5A DPAK

MOSFET N-CH 525V 2.5A DPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3

MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD4N52K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD4N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD4N52K3
MOSFET N-CH 525V 2.5A DPAK

MOSFET N-CH 525V 2.5A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102893-STD4N52K3 497-10647-2-ND STD4N52K3 STD4N52K3 STD4N52K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N52K3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 525 volts 525 volts
PD 45000 milliwatts 45000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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