N-Channel 600V 3.3A (Tc) 50W (Tc) Surface Mount DPAK
N-Channel 600V 3.3A (Tc) 50W (Tc) Surface Mount DPAK
N-Channel 600V 3.3A (Tc) 50W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260847-STD3NM60N
Series: MDmesh II
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Family Name: STD3NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: DPAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 9.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 188pF @ 50V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 1.65A, 10V
Alternative Parts (Cross-Reference): IPD60R2K0C6; CDM4-650; IPD60R3K3C6ATMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
600V N-CH MOSFET, 3.3A, 1.8R, DPAK, Surface Mount Product overview: STD3NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 3.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 3.3A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD3NM60N can be used for catalog matching and distributor lookup.
MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
MOSFET N-CH 600V 3.3A DPAK
MOSFET, N-CH, 600V, 3.3A, 50W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13089-1-ND | 1260847-STD3NM60N | 278-STD3NM60N | STD3NM60N | STD3NM60N | 07AH6961 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NM60N | SMD 600V 3.3A DPAK MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 3.3A, 50W, To-252; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | DPAK | TO-3; TO-252 (DPAK) | ||
| QG | 9.5 nC | |||||
| PD | 50000 milliwatts | 50000 milliwatts |
