STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD30N10F7 STD30N10F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102875-STD30N10F7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1270pF @ 50V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): AOD4126; TSM70N10CP ROG; STD30N10F7; RD3P200SNFRATL; Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102875-STD30N10F7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1270pF @ 50V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): AOD4126; TSM70N10CP ROG; STD30N10F7; RD3P200SNFRATL; Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD30N10F7 - 1102875-STD30N10F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD30N10F7
1102875-STD30N10F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD30N10F7 1102875-STD30N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 1102875-STD30N10F7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1270pF @ 50V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): AOD4126; TSM70N10CP ROG; STD30N10F7; RD3P200SNFRATL; Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102875-STD30N10F7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 1270pF @ 50V
Maximum Gate-Source Voltage: 20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): AOD4126; TSM70N10CP ROG; STD30N10F7; RD3P200SNFRATL;
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD30N10F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD30N10F7
Single FETs, MOSFETs STD30N10F7
MOSFET N-CH 100V 32A DPAK

MOSFET N-CH 100V 32A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD30N10F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD30N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD30N10F7
MOSFET N-CH 100V 32A DPAK

MOSFET N-CH 100V 32A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102875-STD30N10F7 STD30N10F7 STD30N10F7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD30N10F7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 50000 milliwatts 50000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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