N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package Product overview: STD2N105K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1050 V, 6 Ohm, 1.5 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1050 V, 6 Ohm, 1.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD2N105K5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 1050V 1.5A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260810-STD2N105K5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1050V
Id - Continuous Drain Current: 1.5A
Rds On (Maximum) at Id, Vgs: 8Ohm at 750mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 10nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 115pF at 100V
N-Channel 1050V 1.5A (Tc) 60W (Tc) Surface Mount DPAK
N-Channel 1050V 1.5A (Tc) 60W (Tc) Surface Mount DPAK
N-Channel 1050V 1.5A (Tc) 60W (Tc) Surface Mount DPAK
MOSFET N-CH 1050V 1.5A DPAK
MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package
MOSFET, N-CH, 1.05KV, 1.5A, 60W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:1.05kV; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD2N105K5 | STD2N105K5 | 1260810-STD2N105K5 | 497-15308-2-ND | STD2N105K5 | STD2N105K5 | 07AH6959 |
| Product Name | N-Channel 1050 V 6 Ohm 1.5 A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STD2N105K5 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.05Kv, 1.5A, 60W, To-252; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 1050 volts | 1050 volts | |||||
| IDSS | 1500 milliamps | 1500 milliamps | |||||
| PD | 60000 milliwatts | 60000 milliwatts |
