STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 STD2HNK60Z-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031127-STD2HNK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 031127-STD2HNK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 - 031127-STD2HNK60Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1
031127-STD2HNK60Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 031127-STD2HNK60Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 031127-STD2HNK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 031127-STD2HNK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - STD2HNK60Z-1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD2HNK60Z-1
Single FETs, MOSFETs STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK

MOSFET N-CH 600V 2A IPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-12783-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12783-5-ND
Single FETs, MOSFETs 497-12783-5-ND
N-Channel 600V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 600V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics - 57P0735 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics
57P0735
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics 57P0735
N CHANNEL MOSFET, 600V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2HNK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD2HNK60Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK

MOSFET N-CH 600V 2A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031127-STD2HNK60Z-1 STD2HNK60Z-1 497-12783-5-ND 57P0735 STD2HNK60Z-1 STD2HNK60Z-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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