STMicroelectronics, Inc. Single FETs, MOSFETs STD2HNK60Z-1

Description
MOSFET N-CH 600V 2A IPAK
  • Single FETs, MOSFETs - STD2HNK60Z-1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 - 031127-STD2HNK60Z-1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-12783-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2HNK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics - 57P0735 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 600V 2A IPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD2HNK60Z-1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD2HNK60Z-1
Single FETs, MOSFETs STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK

MOSFET N-CH 600V 2A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 - 031127-STD2HNK60Z-1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1
031127-STD2HNK60Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 031127-STD2HNK60Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 031127-STD2HNK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 031127-STD2HNK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-12783-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12783-5-ND
Single FETs, MOSFETs 497-12783-5-ND
N-Channel 600V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 600V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2HNK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD2HNK60Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK

MOSFET N-CH 600V 2A IPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD2HNK60Z-1
MOSFET STD2HNK60Z-1
MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

Buy Now Datasheet
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics - 57P0735 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics
57P0735
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics 57P0735
N CHANNEL MOSFET, 600V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD2HNK60Z-1 031127-STD2HNK60Z-1 497-12783-5-ND STD2HNK60Z-1 STD2HNK60Z-1 57P0735
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 2000 milliamps 2000 milliamps
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