STMicroelectronics, Inc. Single FETs, MOSFETs STD2HNK60Z-1

Description
MOSFET N-CH 600V 2A IPAK
  • Single FETs, MOSFETs - STD2HNK60Z-1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 - 031127-STD2HNK60Z-1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-12783-5-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics - 57P0735 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2HNK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 600V 2A IPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD2HNK60Z-1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD2HNK60Z-1
Single FETs, MOSFETs STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK

MOSFET N-CH 600V 2A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 - 031127-STD2HNK60Z-1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1
031127-STD2HNK60Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 031127-STD2HNK60Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 031127-STD2HNK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 031127-STD2HNK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-12783-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12783-5-ND
Single FETs, MOSFETs 497-12783-5-ND
N-Channel 600V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 600V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD2HNK60Z-1
MOSFET STD2HNK60Z-1
MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

Buy Now Datasheet
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics - 57P0735 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics
57P0735
N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics 57P0735
N CHANNEL MOSFET, 600V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2HNK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD2HNK60Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK

MOSFET N-CH 600V 2A IPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD2HNK60Z-1 031127-STD2HNK60Z-1 497-12783-5-ND STD2HNK60Z-1 57P0735 STD2HNK60Z-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2HNK60Z-1 Single FETs, MOSFETs MOSFET N Channel Mosfet, 600V, 2A, To-251; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 2000 milliamps 2000 milliamps
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