STMicroelectronics, Inc. Single FETs, MOSFETs STD20N20T4

Description
N-Channel 200V 18A (Tc) 90W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 200V 18A (Tc) 90W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-4330-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4330-2-ND
Single FETs, MOSFETs 497-4330-2-ND
N-Channel 200V 18A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 200V 18A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD20N20T4 - 1102860-STD20N20T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD20N20T4
1102860-STD20N20T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD20N20T4 1102860-STD20N20T4
Manufacturer: STMicroelectronics Win Source Part Number: 1102860-STD20N20T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 940pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IRFR15N20DTRPBF; FQD18N20V2TF; FQD18N20V2; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102860-STD20N20T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 940pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IRFR15N20DTRPBF; FQD18N20V2TF; FQD18N20V2;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD20N20T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD20N20T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD20N20T4
MOSFET N-CH 200V 18A DPAK

MOSFET N-CH 200V 18A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-4330-2-ND 1102860-STD20N20T4 STD20N20T4
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD20N20T4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
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