STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD16NE06T4 STD16NE06T4

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1148475-STD16NE06T4
Power Dissipation: 40 W
Rise Time: 45 ns
Fall Time: 25 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-252
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -65 °C
Element Configuration: Single
Max Operating Temperature: 175 °C
Continuous Drain Current (ID): 16 A
Drain to Source Breakdown Voltage: 60 V
Drain to Source Resistance: 85 mΩ
Gate to Source Voltage (Vgs): 20 V

16A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN Product overview: STD16NE06T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 16A, 60V, 0.085ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 16A, 60V, 0.085ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-STD16NE06T4 can be used for catalog matching and distributor lookup.