STMicroelectronics, Inc. Single FETs, MOSFETs STD13NM60N

MOSFET N-CH 600V 11A DPAK

600V MOSFET

600V MOSFET

600V MOSFET

N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

600V N-CH MOSFET, 11A, 360mR Rds(on), DPAK Product overview: STD13NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD13NM60N can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 031112-STD13NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPD65R380E6; TSM70N380CP ROG; STD13NM60N; STD16N65M2;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance