STMicroelectronics, Inc. Single FETs, MOSFETs STD13NM60N

Description
MOSFET N-CH 600V 11A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 600V 11A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD13NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD13NM60N
Single FETs, MOSFETs STD13NM60N
MOSFET N-CH 600V 11A DPAK

MOSFET N-CH 600V 11A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13NM60N - 031112-STD13NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13NM60N
031112-STD13NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13NM60N 031112-STD13NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031112-STD13NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 790pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPD65R380E6; TSM70N380CP ROG; STD13NM60N; STD16N65M2; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031112-STD13NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPD65R380E6; TSM70N380CP ROG; STD13NM60N; STD16N65M2;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
151951
MOSFETs 151951
600V MOSFET

600V MOSFET

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
151952P
MOSFETs 151952P
600V MOSFET

600V MOSFET

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
151952
MOSFETs 151952
600V MOSFET

600V MOSFET

Supplier's Site
Single FETs, MOSFETs - 497-8773-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8773-6-ND
Single FETs, MOSFETs 497-8773-6-ND
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-8773-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8773-1-ND
Single FETs, MOSFETs 497-8773-1-ND
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-8773-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8773-2-ND
Single FETs, MOSFETs 497-8773-2-ND
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD13NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD13NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD13NM60N
MOSFET N-CH 600V 11A DPAK

MOSFET N-CH 600V 11A DPAK

Supplier's Site
Mosfet, N-Ch, 600V, 11A, To-252; Channel Type Stmicroelectronics - 33X1194 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, To-252; Channel Type Stmicroelectronics
33X1194
Mosfet, N-Ch, 600V, 11A, To-252; Channel Type Stmicroelectronics 33X1194
MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD13NM60N 031112-STD13NM60N 151951 151952P 497-8773-6-ND STD13NM60N STD13NM60N 33X1194
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13NM60N MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 11A, To-252; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 11000 milliamps 11000 milliamps 11000 milliamps
PD 90000 milliwatts 90000 milliwatts
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