STMicroelectronics, Inc. Single FETs, MOSFETs STD12NM50N

Description
MOSFET N-CH 500V 11A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 500V 11A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD12NM50N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD12NM50N
Single FETs, MOSFETs STD12NM50N
MOSFET N-CH 500V 11A DPAK

MOSFET N-CH 500V 11A DPAK

Supplier's Site Datasheet
Electronic Wholesale - STD12NM50N - 1260768-STD12NM50N - Win Source Electronics
Laguna Hills, CA, United States
Electronic Wholesale - STD12NM50N
1260768-STD12NM50N
Electronic Wholesale - STD12NM50N 1260768-STD12NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 1260768-STD12NM50N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: STD12NM50N Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 100W Alternative Parts (Cross-Reference): SiHD12N50E-GE3; MMD50R380PRH; IPD50R380CEBTMA1; Introduction Date: Mar 23, 1998 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 380mOhm at 5.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 940pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260768-STD12NM50N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: STD12NM50N
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 100W
Alternative Parts (Cross-Reference): SiHD12N50E-GE3; MMD50R380PRH; IPD50R380CEBTMA1;
Introduction Date: Mar 23, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 380mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 940pF at 50V

Buy Now
Single FETs, MOSFETs - 497-5784-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5784-2-ND
Single FETs, MOSFETs 497-5784-2-ND
N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount DPAK

N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD12NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD12NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD12NM50N
MOSFET N-CH 500V 11A DPAK

MOSFET N-CH 500V 11A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors
Product Number STD12NM50N 1260768-STD12NM50N 497-5784-2-ND STD12NM50N
Product Name Single FETs, MOSFETs Electronic Wholesale - STD12NM50N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 11000 milliamps
PD 100000 milliwatts 100000 milliwatts
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