600V 10A N-CH MOSFET DPAK 450mR Product overview: STD11NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD11NM60ND can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 10A DPAK
N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK
N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK
N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 104565-STD11NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STD11NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): IPD60R400CEATMA1; IPD60R600E6BTMA1; IPD65R600E6BTMA1; TK380P60Y,RQ;
Introduction Date: April 23, 2008
ECCN: EAR99
Country of Origin: China
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 10A DPAK
MOSFET, N CH, 600V, 10A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-channel 600V, 10A FDMesh II
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD11NM60ND | STD11NM60ND | 497-8477-6-ND | 104565-STD11NM60ND | STD11NM60ND | 57P0716 | STD11NM60ND |
| Product Name | 600V 10A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 600V, 10A, To-252; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
