STMicroelectronics, Inc. Single FETs, MOSFETs STD11NM60ND

Description
MOSFET N-CH 600V 10A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 600V 10A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD11NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD11NM60ND
Single FETs, MOSFETs STD11NM60ND
MOSFET N-CH 600V 10A DPAK

MOSFET N-CH 600V 10A DPAK

Supplier's Site
Single FETs, MOSFETs - 497-8477-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8477-6-ND
Single FETs, MOSFETs 497-8477-6-ND
N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK

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Single FETs, MOSFETs - 497-8477-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8477-2-ND
Single FETs, MOSFETs 497-8477-2-ND
N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK

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Single FETs, MOSFETs - 497-8477-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8477-1-ND
Single FETs, MOSFETs 497-8477-1-ND
N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 600V 10A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM60ND - 104565-STD11NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM60ND
104565-STD11NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM60ND 104565-STD11NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 104565-STD11NM60ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Family Name: STD11NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 850pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): IPD60R400CEATMA1; IPD60R600E6BTMA1; IPD65R600E6BTMA1; TK380P60Y,RQ; Introduction Date: April 23, 2008 ECCN: EAR99 Country of Origin: China Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 104565-STD11NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STD11NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): IPD60R400CEATMA1; IPD60R600E6BTMA1; IPD65R600E6BTMA1; TK380P60Y,RQ;
Introduction Date: April 23, 2008
ECCN: EAR99
Country of Origin: China
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600V, 10A FDMesh II

MOSFET N-channel 600V, 10A FDMesh II

Buy Now Datasheet
Mosfet, N Ch, 600V, 10A, To-252; Channel Type Stmicroelectronics - 57P0716 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 10A, To-252; Channel Type Stmicroelectronics
57P0716
Mosfet, N Ch, 600V, 10A, To-252; Channel Type Stmicroelectronics 57P0716
MOSFET, N CH, 600V, 10A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CH, 600V, 10A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD11NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD11NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD11NM60ND
MOSFET N-CH 600V 10A DPAK

MOSFET N-CH 600V 10A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD11NM60ND 497-8477-6-ND 104565-STD11NM60ND STD11NM60ND 57P0716 STD11NM60ND
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM60ND MOSFET Mosfet, N Ch, 600V, 10A, To-252; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 10000 milliamps 10000 milliamps
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