Win Source Part Number: 1014710-STD11N60DM2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ DM2
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16925-2,497-1692
Base Product Number: STD11
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 10A DPAK
N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK
MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
POWER MOSFET, N CHANNEL, 10A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 10A DPAK
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 1014710-STD11N60DM2 | STD11N60DM2 | 1888550 | 1888550P | 497-16925-1-ND | STD11N60DM2 | 14AC7523 | STD11N60DM2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Power Mosfet, N Channel, 10A, To-252-3; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 110000 milliwatts | 110000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Dpak | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
