MOSFET N-CH 650V 8A D2PAK
650V 8A N-CH MOSFET D2PAK 0.9 Ohm Product overview: STB8NM60T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8A, 0.9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8A, 0.9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB8NM60T4 can be used for catalog matching and distributor lookup.
N-Channel 650V 8A (Tc) 100W (Tc) Surface Mount D2PAK
N-Channel 650V 8A (Tc) 100W (Tc) Surface Mount D2PAK
N-Channel 650V 8A (Tc) 100W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 066298-STB8NM60T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Power MOSFET, N Channel, 8 A, 650 V, 0.9 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 650V 8A D2PAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB8NM60T4 | 278-STB8NM60T4 | 497-5386-6-ND | 066298-STB8NM60T4 | 99W9708 | STB8NM60T4 | STB8NM60T4 |
| Product Name | Single FETs, MOSFETs | 650V 8A 0.9 Ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB8NM60T4 | Power Mosfet, N Channel, 8 A, 650 V, 0.9 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| IDSS | 8000 milliamps |
