STMicroelectronics, Inc. Single FETs, MOSFETs STB80PF55T4

Description
P-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
P-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 497-6559-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-6559-2-ND
Single FETs, MOSFETs 497-6559-2-ND
P-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

P-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 - 1102814-STB80PF55T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4
1102814-STB80PF55T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 1102814-STB80PF55T4
Manufacturer: STMicroelectronics Win Source Part Number: 1102814-STB80PF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 258nC @ 10V Max Input Capacitance: 5500pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 18 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1102814-STB80PF55T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 258nC @ 10V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 18 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB80PF55T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB80PF55T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB80PF55T4
MOSFET P-CH 55V 80A D2PAK

MOSFET P-CH 55V 80A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-6559-2-ND 1102814-STB80PF55T4 STB80PF55T4
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 55 volts
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