STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 STB80PF55T4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102814-STB80PF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 258nC @ 10V Max Input Capacitance: 5500pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 18 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102814-STB80PF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 258nC @ 10V Max Input Capacitance: 5500pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 18 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 - 1102814-STB80PF55T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4
1102814-STB80PF55T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 1102814-STB80PF55T4
Manufacturer: STMicroelectronics Win Source Part Number: 1102814-STB80PF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 258nC @ 10V Max Input Capacitance: 5500pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 18 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1102814-STB80PF55T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 258nC @ 10V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 18 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1102814-STB80PF55T4 497-6559-2-ND STB80PF55T4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80PF55T4 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 55 volts
PD 300000 milliwatts
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