N-CH MOSFET 200V 61A 23mR D2PAK Product overview: STB80N20M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 61A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 61A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80N20M5 can be used for catalog matching and distributor lookup.
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031087-STB80N20M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STB80N20M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 61A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 104nC @ 10V
Max Input Capacitance: 4329pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 23 mOhm @ 30.5A, 10V
Alternative Parts (Cross-Reference): IRFS4227; SUM90140E-GE3; SUM65N20-30-E3;
Introduction Date: July 01, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 61A D2PAK
MOSFET N-CH 200V 61A D2PAK
MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-Ch 200V 0.019 61A Mdmesh V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB80N20M5 | 497-10705-1-ND | 031087-STB80N20M5 | STB80N20M5 | STB80N20M5 | 51AC9539 | STB80N20M5 |
| Product Name | 200V 61A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80N20M5 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | ||
| V(BR)DSS | 200 volts | 200 volts |
