STMicroelectronics, Inc. Single FETs, MOSFETs STB80N20M5

Description
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK
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Description
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10705-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10705-1-ND
Single FETs, MOSFETs 497-10705-1-ND
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK

N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10705-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10705-6-ND
Single FETs, MOSFETs 497-10705-6-ND
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK

N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10705-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10705-2-ND
Single FETs, MOSFETs 497-10705-2-ND
N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK

N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - STB80N20M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB80N20M5
Single FETs, MOSFETs STB80N20M5
MOSFET N-CH 200V 61A D2PAK

MOSFET N-CH 200V 61A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80N20M5 - 031087-STB80N20M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80N20M5
031087-STB80N20M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80N20M5 031087-STB80N20M5
Manufacturer: STMicroelectronics Win Source Part Number: 031087-STB80N20M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Family Name: STB80N20M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 61A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 104nC @ 10V Max Input Capacitance: 4329pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 23 mOhm @ 30.5A, 10V Alternative Parts (Cross-Reference): IRFS4227; SUM90140E-GE3; SUM65N20-30-E3; Introduction Date: July 01, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031087-STB80N20M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STB80N20M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 61A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 104nC @ 10V
Max Input Capacitance: 4329pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 23 mOhm @ 30.5A, 10V
Alternative Parts (Cross-Reference): IRFS4227; SUM90140E-GE3; SUM65N20-30-E3;
Introduction Date: July 01, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB80N20M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB80N20M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB80N20M5
MOSFET N-CH 200V 61A D2PAK

MOSFET N-CH 200V 61A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 200V 0.019 61A Mdmesh V

MOSFET N-Ch 200V 0.019 61A Mdmesh V

Buy Now Datasheet
Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity Stmicroelectronics - 51AC9539 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity Stmicroelectronics
51AC9539
Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity Stmicroelectronics 51AC9539
MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-10705-1-ND STB80N20M5 031087-STB80N20M5 STB80N20M5 STB80N20M5 51AC9539
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80N20M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 61000 milliamps 61000 milliamps
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