STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7NK80Z-1 STB7NK80Z-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260698-STB7NK80Z-1 Series: SuperMESH Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Family Name: STB7NK80Z-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4.5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1138pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V Alternative Parts (Cross-Reference): IRFBE30L; 2SK2884(Q); FQI7N80; Introduction Date: August 01, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260698-STB7NK80Z-1 Series: SuperMESH Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Family Name: STB7NK80Z-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4.5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1138pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V Alternative Parts (Cross-Reference): IRFBE30L; 2SK2884(Q); FQI7N80; Introduction Date: August 01, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7NK80Z-1 - 1260698-STB7NK80Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7NK80Z-1
1260698-STB7NK80Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7NK80Z-1 1260698-STB7NK80Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 1260698-STB7NK80Z-1 Series: SuperMESH Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Family Name: STB7NK80Z-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4.5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1138pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V Alternative Parts (Cross-Reference): IRFBE30L; 2SK2884(Q); FQI7N80; Introduction Date: August 01, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1260698-STB7NK80Z-1
Series: SuperMESH
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Family Name: STB7NK80Z-1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1138pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V
Alternative Parts (Cross-Reference): IRFBE30L; 2SK2884(Q); FQI7N80;
Introduction Date: August 01, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 800 V 1.5 Ohm 5.2 A MOSFET Transistor
278-STB7NK80Z-1
N-Channel 800 V 1.5 Ohm 5.2 A MOSFET Transistor 278-STB7NK80Z-1
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package Product overview: STB7NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 1.5 Ohm, 5.2 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 1.5 Ohm, 5.2 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB7NK80Z-1 can be used for catalog matching and distributor lookup.

N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package Product overview: STB7NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 1.5 Ohm, 5.2 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 1.5 Ohm, 5.2 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB7NK80Z-1 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - 497-12539-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12539-5-ND
Single FETs, MOSFETs 497-12539-5-ND
N-Channel 800V 5.2A (Tc) 125W (Tc) Through Hole I2PAK

N-Channel 800V 5.2A (Tc) 125W (Tc) Through Hole I2PAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A

MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB7NK80Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB7NK80Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB7NK80Z-1
MOSFET N-CH 800V 5.2A I2PAK

MOSFET N-CH 800V 5.2A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260698-STB7NK80Z-1 278-STB7NK80Z-1 497-12539-5-ND STB7NK80Z-1 STB7NK80Z-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7NK80Z-1 N-Channel 800 V 1.5 Ohm 5.2 A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 56 nC
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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