600V 6A N-CH MOSFET, 1.2R RdsOn, D2PAK Product overview: STB6NK60ZT4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB6NK60ZT4 can be used for catalog matching and distributor lookup.
N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK
N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK
N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031084-STB6NK60ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB6NK60Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 905pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): FQB7N65C; FQB7N65CTM; IRFBC40ASTRL; IRFBC40ASTRR;
Introduction Date: May 07, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
(PRICE/TR), MOSFET, N CHANNEL, 600V, 6A, D2PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:3A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):1OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3.75V; PRODUCT RANGE:- ROHS COMPL. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH
MOSFET, N CHANNEL, 600V, 6A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
MOSFET N-CH 600V 6A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STB6NK60ZT4 | 497-12537-2-ND | 031084-STB6NK60ZT4 | 38972484 | STB6NK60ZT4 | 33R1127 | STB6NK60ZT4 |
| Product Name | 600V 6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK60ZT4 | Transistor | MOSFET | Mosfet, N Channel, 600V, 6A, D2Pak; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 110000 milliwatts | 110000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | Surface Mount |
