STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK60ZT4 STB6NK60ZT4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031084-STB6NK60ZT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB6NK60Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 905pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): FQB7N65C; FQB7N65CTM; IRFBC40ASTRL; IRFBC40ASTRR; Introduction Date: May 07, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 031084-STB6NK60ZT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB6NK60Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 905pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): FQB7N65C; FQB7N65CTM; IRFBC40ASTRL; IRFBC40ASTRR; Introduction Date: May 07, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK60ZT4 - 031084-STB6NK60ZT4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK60ZT4
031084-STB6NK60ZT4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK60ZT4 031084-STB6NK60ZT4
Manufacturer: STMicroelectronics Win Source Part Number: 031084-STB6NK60ZT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB6NK60Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 905pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): FQB7N65C; FQB7N65CTM; IRFBC40ASTRL; IRFBC40ASTRR; Introduction Date: May 07, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031084-STB6NK60ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB6NK60Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 905pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): FQB7N65C; FQB7N65CTM; IRFBC40ASTRL; IRFBC40ASTRR;
Introduction Date: May 07, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-12537-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12537-2-ND
Single FETs, MOSFETs 497-12537-2-ND
N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK

N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-12537-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12537-6-ND
Single FETs, MOSFETs 497-12537-6-ND
N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK

N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-12537-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12537-1-ND
Single FETs, MOSFETs 497-12537-1-ND
N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK

N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Transistor - 38972484 - Radwell International
Willingboro, NJ, United States
Transistor
38972484
Transistor 38972484
(PRICE/TR), MOSFET, N CHANNEL, 600V, 6A, D2PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:3A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):1OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3.75V; PRODUCT RANGE:- ROHS COMPL. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TR), MOSFET, N CHANNEL, 600V, 6A, D2PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:3A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):1OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3.75V; PRODUCT RANGE:- ROHS COMPL. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, N Channel, 600V, 6A, D2Pak; Channel Type Stmicroelectronics - 33R1127 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 6A, D2Pak; Channel Type Stmicroelectronics
33R1127
Mosfet, N Channel, 600V, 6A, D2Pak; Channel Type Stmicroelectronics 33R1127
MOSFET, N CHANNEL, 600V, 6A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 6A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB6NK60ZT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB6NK60ZT4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB6NK60ZT4
MOSFET N-CH 600V 6A D2PAK

MOSFET N-CH 600V 6A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH

MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031084-STB6NK60ZT4 497-12537-2-ND 38972484 33R1127 STB6NK60ZT4 STB6NK60ZT4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK60ZT4 Single FETs, MOSFETs Transistor Mosfet, N Channel, 600V, 6A, D2Pak; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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