STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5NB80T4 STB5NB80T4

Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1191371-STB5NB80T4 Power Dissipation: 110 W Rise Time: 9 ns Fall Time: 14 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -65 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 5 A Drain to Source Breakdown Voltage: 800 V Drain to Source Resistance: 2.2 Ω Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1191371-STB5NB80T4 Power Dissipation: 110 W Rise Time: 9 ns Fall Time: 14 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -65 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 5 A Drain to Source Breakdown Voltage: 800 V Drain to Source Resistance: 2.2 Ω Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5NB80T4 - 1191371-STB5NB80T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5NB80T4
1191371-STB5NB80T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5NB80T4 1191371-STB5NB80T4
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1191371-STB5NB80T4 Power Dissipation: 110 W Rise Time: 9 ns Fall Time: 14 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -65 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 5 A Drain to Source Breakdown Voltage: 800 V Drain to Source Resistance: 2.2 Ω Gate to Source Voltage (Vgs): 30 V

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1191371-STB5NB80T4
Power Dissipation: 110 W
Rise Time: 9 ns
Fall Time: 14 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: D2PAK
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -65 °C
Element Configuration: Single
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 5 A
Drain to Source Breakdown Voltage: 800 V
Drain to Source Resistance: 2.2 Ω
Gate to Source Voltage (Vgs): 30 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191371-STB5NB80T4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5NB80T4
V(BR)DSS 800 volts
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