650V 42A N-CH MOSFET D2PAK 63mR RdsOn Product overview: STB57N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB57N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1260664-STB57N65M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 42A
Rds On (Maximum) at Id, Vgs: 63mOhm at 21A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 98nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 4200pF at 100V
N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 650V 42A D2PAK
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
MOSFET, N-CH, 650V, 42A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 42A D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STB57N65M5 | 1260664-STB57N65M5 | 497-13087-6-ND | STB57N65M5 | 1032002 | 7832977P | STB57N65M5 | 98Y2466 | STB57N65M5 |
| Product Name | 650V 42A MOSFET Transistor | FETs - Single - STB57N65M5 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 42A, To-263-3; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||||
| QG | 98 nC |
