N-Channel 60V 50A (Tc) 110W (Tc) Surface Mount D2PAK
N-Channel 60V 50A (Tc) 110W (Tc) Surface Mount D2PAK
N-Channel 60V 50A (Tc) 110W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031082-STB55NF06T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB55NF06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 27.5A, 10V
Alternative Parts (Cross-Reference): AOB462L; 2SK2376(SM,Q); BUK7616-55AT; BUK7616-55A;
Introduction Date: March 23, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 50A D2PAK
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MOSFET N-Ch 60V 50A UltraFET II D2PAK
MOSFET N-Ch 60V 50A UltraFET II D2PAK
MOSFET, N CHANNEL, 60V, 50A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:27.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
60V 50A 18mΩ@10V,27.5A 110W 4V@250uA N Channel D2PAK MOSFETs ROHS
MOSFET N-CH 60V 50A D2PAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-6553-6-ND | 031082-STB55NF06T4 | STB55NF06T4 | 6875197 | 6875197P | STB55NF06T4 | 33R1126 | STB55NF06T4 | STB55NF06T4 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB55NF06T4 | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Mosfet, N Channel, 60V, 50A, D2Pak; Channel Type Stmicroelectronics | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
