MOSFET N-CH 650V 42A D2PAK
N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 1278160-STB43N65M5
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, MDmesh™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16299-6,497-1629
Base Product Number: STB43
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 42A D2PAK
MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
MOSFET, N-CH, 650V, 42A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB43N65M5 | 1888512P | 1888512 | 497-16299-1-ND | 1278160-STB43N65M5 | STB43N65M5 | STB43N65M5 | 04AJ4703 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 42A, To263; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 650 volts | |||||||
| IDSS | 42000 milliamps | 42000 milliamps | ||||||
| PD | 250000 milliwatts |
