STMicroelectronics, Inc. FETs - Single - STB38N65M5 STB38N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260649-STB38N65M5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260649-STB38N65M5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB38N65M5 - 1260649-STB38N65M5 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB38N65M5
1260649-STB38N65M5
FETs - Single - STB38N65M5 1260649-STB38N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1260649-STB38N65M5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260649-STB38N65M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V

Buy Now
Single FETs, MOSFETs - 497-13086-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13086-2-ND
Single FETs, MOSFETs 497-13086-2-ND
N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-13086-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13086-1-ND
Single FETs, MOSFETs 497-13086-1-ND
N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-13086-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13086-6-ND
Single FETs, MOSFETs 497-13086-6-ND
N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - STB38N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB38N65M5
Single FETs, MOSFETs STB38N65M5
MOSFET N-CH 650V 30A D2PAK

MOSFET N-CH 650V 30A D2PAK

Supplier's Site Datasheet
MOSFETs - 7833059 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7833059
MOSFETs 7833059
MOSFET N-Channel 650V 30A D2PAK

MOSFET N-Channel 650V 30A D2PAK

Supplier's Site
MOSFETs - 7833059P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7833059P
MOSFETs 7833059P
MOSFET N-Channel 650V 30A D2PAK

MOSFET N-Channel 650V 30A D2PAK

Supplier's Site
MOSFETs - 9208821 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9208821
MOSFETs 9208821
MOSFET N-Channel 650V 30A D2PAK

MOSFET N-Channel 650V 30A D2PAK

Supplier's Site
Mosfet, N-Ch, 650V, 30A, To-263; Transistor Polarity Stmicroelectronics - 34AC1981 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 30A, To-263; Transistor Polarity Stmicroelectronics
34AC1981
Mosfet, N-Ch, 650V, 30A, To-263; Transistor Polarity Stmicroelectronics 34AC1981
MOSFET, N-CH, 650V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 650V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB38N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB38N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB38N65M5
MOSFET N-CH 650V 30A D2PAK

MOSFET N-CH 650V 30A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260649-STB38N65M5 497-13086-2-ND STB38N65M5 7833059 7833059P 34AC1981 STB38N65M5 STB38N65M5
Product Name FETs - Single - STB38N65M5 Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs Mosfet, N-Ch, 650V, 30A, To-263; Transistor Polarity Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
QG 71 nC
PD 190000 milliwatts 190000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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