Manufacturer: STMicroelectronics
Win Source Part Number: 1260649-STB38N65M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V
650V 30A N-Channel Power MOSFET D2PAK Product overview: STB38N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB38N65M5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 30A D2PAK
N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 650V 30A D2PAK
MOSFET, N-CH, 650V, 30A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1260649-STB38N65M5 | 7833059 | 7833059P | 278-STB38N65M5 | STB38N65M5 | 497-13086-2-ND | STB38N65M5 | 34AC1981 | STB38N65M5 |
| Product Name | FETs - Single - STB38N65M5 | MOSFETs | MOSFETs | N-Channel 650V 30A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 30A, To-263; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 650 volts | 650 volts | |||||||
| QG | 71 nC | ||||||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | ||||||
| TJ | 150 C (302 F) | -55 C (-67 F) | 150 C (302 F) |
