STMicroelectronics, Inc. FETs - Single - STB36NM60N STB36NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260648-STB36NM60N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 105mOhm at 14.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 83.6nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2722pF at 100V
  • FETs - Single - STB36NM60N - 1260648-STB36NM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-12972-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-12972-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STB36NM60N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB36NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260648-STB36NM60N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 105mOhm at 14.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 83.6nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2722pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB36NM60N - 1260648-STB36NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB36NM60N
1260648-STB36NM60N
FETs - Single - STB36NM60N 1260648-STB36NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1260648-STB36NM60N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 105mOhm at 14.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 83.6nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2722pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260648-STB36NM60N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 210W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 29A
Rds On (Maximum) at Id, Vgs: 105mOhm at 14.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 83.6nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 2722pF at 100V

Buy Now
Single FETs, MOSFETs - 497-12972-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12972-2-ND
Single FETs, MOSFETs 497-12972-2-ND
N-Channel 600V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-12972-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12972-1-ND
Single FETs, MOSFETs 497-12972-1-ND
N-Channel 600V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - STB36NM60N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB36NM60N
Single FETs, MOSFETs STB36NM60N
MOSFET N-CH 600V 29A D2PAK

MOSFET N-CH 600V 29A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB36NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB36NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB36NM60N
MOSFET N-CH 600V 29A D2PAK

MOSFET N-CH 600V 29A D2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB36NM60N
MOSFET STB36NM60N
MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS

MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260648-STB36NM60N 497-12972-2-ND STB36NM60N STB36NM60N STB36NM60N
Product Name FETs - Single - STB36NM60N Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 210000 milliwatts 210000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 2722 pF @ 100 V
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