N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package Product overview: STB35N60DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.094 Ohm, 28 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.094 Ohm, 28 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB35N60DM2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 28A D2PAK
Win Source Part Number: 971190-STB35N60DM2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ DM2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16357-6,497-1635
Base Product Number: STB35
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 600V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
MOSFET N-CH 600V 28A D2PAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STB35N60DM2 | STB35N60DM2 | 971190-STB35N60DM2 | 497-16357-6-ND | 79Y9448 | STB35N60DM2 | STB35N60DM2 |
| Product Name | N-Channel 600 V 0.094 Ohm 28 A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 28A, To-263; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 28000 milliamps | 28000 milliamps | |||||
| PD | 210000 milliwatts | 210000 milliwatts |
