STMicroelectronics, Inc. Single FETs, MOSFETs STB35N60DM2

Description
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-16357-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16357-6-ND
Single FETs, MOSFETs 497-16357-6-ND
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-16357-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16357-2-ND
Single FETs, MOSFETs 497-16357-2-ND
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-16357-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16357-1-ND
Single FETs, MOSFETs 497-16357-1-ND
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - STB35N60DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB35N60DM2
Single FETs, MOSFETs STB35N60DM2
MOSFET N-CH 600V 28A D2PAK

MOSFET N-CH 600V 28A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 971190-STB35N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
971190-STB35N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 971190-STB35N60DM2
Win Source Part Number: 971190-STB35N60DM2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ DM2 Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 210W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16357-6,497-1635 7-1,497-16357-2 Base Product Number: STB35 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 971190-STB35N60DM2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ DM2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16357-6,497-16357-1,497-16357-2
Base Product Number: STB35
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Mosfet, N-Ch, 600V, 28A, To-263; Transistor Polarity Stmicroelectronics - 79Y9448 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 28A, To-263; Transistor Polarity Stmicroelectronics
79Y9448
Mosfet, N-Ch, 600V, 28A, To-263; Transistor Polarity Stmicroelectronics 79Y9448
MOSFET, N-CH, 600V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 600V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package

MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB35N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB35N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB35N60DM2
MOSFET N-CH 600V 28A D2PAK

MOSFET N-CH 600V 28A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-16357-6-ND STB35N60DM2 971190-STB35N60DM2 79Y9448 STB35N60DM2 STB35N60DM2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, N-Ch, 600V, 28A, To-263; Transistor Polarity Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 28000 milliamps 28000 milliamps
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