650V 28A N-CH MOSFET D2PAK, 110mR RdsOn Product overview: STB34N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB34N65M5 can be used for catalog matching and distributor lookup.
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1260644-STB34N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: STB34N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5
MOSFET N-CH 650V 28A D2PAK
MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB34N65M5 | 497-13085-2-ND | 1260644-STB34N65M5 | STB34N65M5 | STB34N65M5 | 61AC2085 |
| Product Name | 650V 28A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | ||||
| PD | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-220; TO-247; TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
