STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 STB34N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260644-STB34N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STB34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260644-STB34N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STB34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 - 1260644-STB34N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5
1260644-STB34N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 1260644-STB34N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1260644-STB34N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STB34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1260644-STB34N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: STB34N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-13085-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13085-2-ND
Single FETs, MOSFETs 497-13085-2-ND
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13085-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13085-6-ND
Single FETs, MOSFETs 497-13085-6-ND
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13085-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13085-1-ND
Single FETs, MOSFETs 497-13085-1-ND
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics - 61AC2085 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics
61AC2085
Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics 61AC2085
MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB34N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB34N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB34N65M5
MOSFET N-CH 650V 28A D2PAK

MOSFET N-CH 650V 28A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

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Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260644-STB34N65M5 497-13085-2-ND 61AC2085 STB34N65M5 STB34N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 Single FETs, MOSFETs Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
QG 62.5 nC
PD 190000 milliwatts
TJ 150 C (302 F)
Package Type TO-220; TO-247; TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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