STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 STB34N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260644-STB34N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STB34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260644-STB34N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STB34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 - 1260644-STB34N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5
1260644-STB34N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 1260644-STB34N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1260644-STB34N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STB34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1260644-STB34N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: STB34N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IPB65R110CFDA; IPB65R110CFDAXT; IPB60R099CPATMA1;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-13085-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13085-2-ND
Single FETs, MOSFETs 497-13085-2-ND
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13085-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13085-6-ND
Single FETs, MOSFETs 497-13085-6-ND
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13085-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13085-1-ND
Single FETs, MOSFETs 497-13085-1-ND
N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 28A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB34N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB34N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB34N65M5
MOSFET N-CH 650V 28A D2PAK

MOSFET N-CH 650V 28A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

Buy Now Datasheet
Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics - 61AC2085 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics
61AC2085
Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics 61AC2085
MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260644-STB34N65M5 497-13085-2-ND STB34N65M5 STB34N65M5 61AC2085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB34N65M5 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 28A, To-263; Transistor Polarity Stmicroelectronics
QG 62.5 nC
PD 190000 milliwatts
TJ 150 C (302 F)
Package Type TO-220; TO-247; TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
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