Win Source Part Number: 1278162-STB34N50DM2A
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, MDmesh™ DM2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16135-2,497-1613
Base Product Number: STB34
Drive Voltage (Max Rds On, Min Rds On): 10V
Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package Product overview: STB34N50DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 500 V, 0.10 Ohm, 26 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 500 V, 0.10 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB34N50DM2AG can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 500V, 26A, TO263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 500V 26A D2PAK
MOSFET N-CH 500V 26A D2PAK
MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278162-STB34N50DM2AG | 278-STB34N50DM2AG | 04AJ4700 | STB34N50DM2AG | STB34N50DM2AG | STB34N50DM2AG |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Automotive N-Channel 500 V 0.10 Ohm MOSFET Transistor | Mosfet, N-Ch, 500V, 26A, To263Ab-3; Transistor Polarity Stmicroelectronics | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; SOT3 | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| IDSS | 26000 milliamps | 26000 milliamps | ||||
| rDS(on) | 0.1000 ohms |
