600V 26A N-CH MOSFET D2PAK 125mR Product overview: STB33N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB33N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 26A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 26A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 26A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1260642-STB33N60M2
Series: MDmesh II Plus
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Family Name: STB33N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): IPB60R199CPAXT; IPB65R190C6; IPB65R110CFDA;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Power Field-Effect Transistor
MOSFET N-CH 600V 26A D2PAK
MOSFET N-CH 600V 26A D2PAK
MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB33N60M2 | 497-14973-6-ND | 1260642-STB33N60M2 | STB33N60M2 | STB33N60M2 | STB33N60M2 | STB33N60M2 |
| Product Name | 600V 26A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB33N60M2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 190000 milliwatts | 190000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
