MOSFET N CH 500V 22A D2PAK
500V 22A N-CH Power MOSFET D2PAK SMT Product overview: STB32NM50N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB32NM50N can be used for catalog matching and distributor lookup.
N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 22A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1260641-STB32NM50N
Series: MDmesh II
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Family Name: STB32NM50N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
RoHS State: Request Verification
Manufacturer Package: TO-263 (D2Pak)
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1973pF @ 50V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IPB50R140CPXT; IPB50R140CPATMA1; IPB50R140CP;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 500V, 22A, 190W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N CH 500V 22A D2PAK
MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB32NM50N | 278-STB32NM50N | 497-13264-6-ND | 1260641-STB32NM50N | 07AH6949 | STB32NM50N | STB32NM50N |
| Product Name | Single FETs, MOSFETs | 500V 22A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB32NM50N | Mosfet, N-Ch, 500V, 22A, 190W, To-263; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 500 volts | 500 volts | |||||
| IDSS | 22000 milliamps | 22000 milliamps | |||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts |
