STMicroelectronics, Inc. Single FETs, MOSFETs STB32N65M5

Description
MOSFET N-CH 650V 24A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 650V 24A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB32N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB32N65M5
Single FETs, MOSFETs STB32N65M5
MOSFET N-CH 650V 24A D2PAK

MOSFET N-CH 650V 24A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10564-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10564-6-ND
Single FETs, MOSFETs 497-10564-6-ND
N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10564-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10564-1-ND
Single FETs, MOSFETs 497-10564-1-ND
N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10564-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10564-2-ND
Single FETs, MOSFETs 497-10564-2-ND
N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB32N65M5 - 1260640-STB32N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB32N65M5
1260640-STB32N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB32N65M5 1260640-STB32N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1260640-STB32N65M5 Series: MDmesh V Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STB32N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3320pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 119 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): IPB65R150CFDAATMA1; IPB60R199CPAATMA1; IPB60R199CPATMA1; Introduction Date: January 16, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1260640-STB32N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: STB32N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3320pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 119 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IPB65R150CFDAATMA1; IPB60R199CPAATMA1; IPB60R199CPATMA1;
Introduction Date: January 16, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB32N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB32N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB32N65M5
MOSFET N-CH 650V 24A D2PAK

MOSFET N-CH 650V 24A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET POWER MOSFET N-CH 650V

MOSFET POWER MOSFET N-CH 650V

Buy Now Datasheet
Mosfet, N Ch, 650V, 24A, To-263; Channel Type Stmicroelectronics - 71R6973 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 650V, 24A, To-263; Channel Type Stmicroelectronics
71R6973
Mosfet, N Ch, 650V, 24A, To-263; Channel Type Stmicroelectronics 71R6973
MOSFET, N CH, 650V, 24A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CH, 650V, 24A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STB32N65M5 497-10564-6-ND 1260640-STB32N65M5 STB32N65M5 STB32N65M5 71R6973
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB32N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Ch, 650V, 24A, To-263; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 24000 milliamps 24000 milliamps
PD 150000 milliwatts 150000 milliwatts
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