N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK
650V 24A N-CH MOSFET D2PAK, 95mR RdsOn Product overview: STB32N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB32N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1260640-STB32N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: STB32N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3320pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 119 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IPB65R150CFDAATMA1; IPB60R199CPAATMA1; IPB60R199CPATMA1;
Introduction Date: January 16, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 24A D2PAK
MOSFET N-CH 650V 24A D2PAK
MOSFET, N CH, 650V, 24A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-10564-6-ND | 278-STB32N65M5 | 1260640-STB32N65M5 | STB32N65M5 | STB32N65M5 | 71R6973 | STB32N65M5 |
| Product Name | Single FETs, MOSFETs | 650V 24A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB32N65M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 650V, 24A, To-263; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-220; TO-247; TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | ||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| QG | 72 nC |
