STMicroelectronics, Inc. N-Channel 25A 600V 0.13ohm MOSFET Transistor STB30NM60N

25A, 600V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Product overview: STB30NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25A, 600V, 0.13ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25A, 600V, 0.13ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB30NM60N can be used for catalog matching and distributor lookup.

N-Channel 600V 25A (Tc) 190W (Tc) Surface Mount D2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 1260636-STB30NM60N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 25A
Rds On (Maximum) at Id, Vgs: 130mOhm at 12.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 91nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 50V