STMicroelectronics, Inc. FETs - Single - STB30NM60N STB30NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260636-STB30NM60N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 25A Rds On (Maximum) at Id, Vgs: 130mOhm at 12.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 91nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 50V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260636-STB30NM60N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 25A Rds On (Maximum) at Id, Vgs: 130mOhm at 12.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 91nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 50V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB30NM60N - 1260636-STB30NM60N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB30NM60N
1260636-STB30NM60N
FETs - Single - STB30NM60N 1260636-STB30NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1260636-STB30NM60N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 25A Rds On (Maximum) at Id, Vgs: 130mOhm at 12.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 91nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260636-STB30NM60N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 25A
Rds On (Maximum) at Id, Vgs: 130mOhm at 12.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 91nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 50V

Buy Now
Single FETs, MOSFETs - 497-8474-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8474-2-ND
Single FETs, MOSFETs 497-8474-2-ND
N-Channel 600V 25A (Tc) 190W (Tc) Surface Mount D2PAK

N-Channel 600V 25A (Tc) 190W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore
N-Channel 25A 600V 0.13ohm MOSFET Transistor
278-STB30NM60N
N-Channel 25A 600V 0.13ohm MOSFET Transistor 278-STB30NM60N
25A, 600V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Product overview: STB30NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25A, 600V, 0.13ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25A, 600V, 0.13ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB30NM60N can be used for catalog matching and distributor lookup.

25A, 600V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Product overview: STB30NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25A, 600V, 0.13ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25A, 600V, 0.13ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB30NM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB30NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB30NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB30NM60N
MOSFET N-CH 600V 25A D2PAK

MOSFET N-CH 600V 25A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260636-STB30NM60N 497-8474-2-ND 278-STB30NM60N STB30NM60N
Product Name FETs - Single - STB30NM60N Single FETs, MOSFETs N-Channel 25A 600V 0.13ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
QG 91 nC
PD 190000 milliwatts 190000 milliwatts
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