STMicroelectronics, Inc. Single FETs, MOSFETs STB25N80K5

Description
MOSFET N-CH 800V 19.5A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 800V 19.5A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB25N80K5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB25N80K5
Single FETs, MOSFETs STB25N80K5
MOSFET N-CH 800V 19.5A D2PAK

MOSFET N-CH 800V 19.5A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25N80K5 - 1102784-STB25N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25N80K5
1102784-STB25N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25N80K5 1102784-STB25N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 1102784-STB25N80K5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Family Name: STB25N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 19.5A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 260 mOhm @ 19.5A, 10V Alternative Parts (Cross-Reference): IPB80R290C3AATMA1; FCB290N80; SPB17N80C3XT; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102784-STB25N80K5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Family Name: STB25N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 19.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1600pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 260 mOhm @ 19.5A, 10V
Alternative Parts (Cross-Reference): IPB80R290C3AATMA1; FCB290N80; SPB17N80C3XT;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-13640-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13640-6-ND
Single FETs, MOSFETs 497-13640-6-ND
N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13640-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13640-2-ND
Single FETs, MOSFETs 497-13640-2-ND
N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13640-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13640-1-ND
Single FETs, MOSFETs 497-13640-1-ND
N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB25N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB25N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB25N80K5
MOSFET N-CH 800V 19.5A D2PAK

MOSFET N-CH 800V 19.5A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5

MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5

Buy Now Datasheet
Transistor - 110284269 - Radwell International
Willingboro, NJ, United States
Transistor
110284269
Transistor 110284269
(PRICE/TC) MOSFET, N-CH, 800V, 19.5A, 150DEG C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, N-CH, 800V, 19.5A, 150DEG C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, N-Ch, 800V, 19.5A, 150Deg C Rohs Compliant Stmicroelectronics - 69AH2673 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 19.5A, 150Deg C Rohs Compliant Stmicroelectronics
69AH2673
Mosfet, N-Ch, 800V, 19.5A, 150Deg C Rohs Compliant Stmicroelectronics 69AH2673
MOSFET, N-CH, 800V, 19.5A, 150DEG C ROHS COMPLIANT: YES

MOSFET, N-CH, 800V, 19.5A, 150DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STB25N80K5 1102784-STB25N80K5 497-13640-6-ND STB25N80K5 STB25N80K5 110284269 69AH2673
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25N80K5 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor Mosfet, N-Ch, 800V, 19.5A, 150Deg C Rohs Compliant Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
IDSS 19500 milliamps
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