Manufacturer: STMicroelectronics
Win Source Part Number: 1102783-STB24NM65N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STB24NM65N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2500pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): SPB20N60C3; SPB20N60C3ATMA1; TK20G60W(RVQ,S); TK20G60W,RVQ;
Introduction Date: February 14, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N-Channel 650V 19A (Tc) 160W (Tc) Surface Mount D2PAK
650V N-Channel Power MOSFET, 19A, 190mR, D2PAK Product overview: STB24NM65N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB24NM65N can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 19A D2PAK
MOSFET N-CH 650V 19A D2PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1102783-STB24NM65N | 497-7002-2-ND | 278-STB24NM65N | STB24NM65N | STB24NM65N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24NM65N | Single FETs, MOSFETs | N-Channel 650V 19A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 650 volts | 650 volts | |||
| PD | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts | ||
| TJ | 150 C (302 F) | -55 C (-67 F) | 150 C (302 F) |