The N-channel MOSFET, part number 94T3307, is rated for a maximum drain-source voltage of 500V and a continuous drain current of 17A. It features a low on-resistance of 0.162 Oc, which is measured at a gate-source voltage of 10V. This device is designed using MDmesh,Ñ¢ II technology, providing low input capacitance and gate charge, making it suitable for high-efficiency switching applications. The MOSFET is avalanche tested and has a maximum power dissipation of 125W at a case temperature of 25¬8C. It is available in a D¬=PAK package and is RoHS compliant. The operating junction temperature can reach up to 150¬8C, with a storage temperature range of -55¬8C to 150¬8C.
MOSFET N-CH 500V 17A D2PAK
N-Channel 500V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 005497-STB23NM50N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1330pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
MOSFET N-CH 500V 17A D2PAK
MOSFET, N CH, 500V, 17A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.162ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB23NM50N | 497-10874-6-ND | 7610663 | 7610663P | 005497-STB23NM50N | STB23NM50N | 94T3307 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB23NM50N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 500V, 17A, D2Pak; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 500 volts | 500 volts | |||||
| IDSS | 17000 milliamps | 17000 milliamps | |||||
| PD | 125000 milliwatts | 125000 milliwatts |
