MOSFET N-CH 650V 17A D2PAK
N-Channel 650V 17A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 650V 17A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 650V 17A (Tc) 125W (Tc) Surface Mount D2PAK
650V 17A N-CH MOSFET D2PAK, 150mR Rds(on) Product overview: STB21N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB21N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1021423-STB21N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1950pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 17A D2PAK
MOSFET, N CHANNEL, 650V, 17A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB21N65M5 | 497-10562-6-ND | 278-STB21N65M5 | 1021423-STB21N65M5 | STB21N65M5 | 71R6970 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 650V 17A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB21N65M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 650V, 17A, To-263; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | 650 volts | ||||
| IDSS | 17000 milliamps | 17000 milliamps |
