MOSFET N-CH 550V 20A D2PAK
500V 20A N-CH MOSFET D2PAK, 250mR RdsOn Product overview: STB20NM50T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB20NM50T4 can be used for catalog matching and distributor lookup.
N-Channel 550V 20A (Tc) 192W (Tc) Surface Mount D2PAK
N-Channel 550V 20A (Tc) 192W (Tc) Surface Mount D2PAK
N-Channel 550V 20A (Tc) 192W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 129019-STB20NM50T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1480pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 500V, 20A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 550V 20A D2PAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB20NM50T4 | 278-STB20NM50T4 | 497-STB20NM50T4TR-ND | 129019-STB20NM50T4 | 45AC7524 | STB20NM50T4 | STB20NM50T4 |
| Product Name | Single FETs, MOSFETs | 500V 20A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM50T4 | Mosfet, N-Ch, 500V, 20A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 550 volts | 550 volts | |||||
| IDSS | 20000 milliamps | 20000 milliamps |
