MOSFET N-CH 330V 18A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260614-STB18NF30
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 330V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 180mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 44nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1650pF at 25V
N-Channel 330V 18A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 330V 18A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 330V 18A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-Ch 330V 18A MOS STripFET II D2PAK
MOSFET N-CH 330V 18A D2PAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STB18NF30 | 1260614-STB18NF30 | 497-12970-6-ND | STB18NF30 | STB18NF30 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STB18NF30 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 330 volts | 330 volts | |||
| IDSS | 18000 milliamps | ||||
| PD | 150000 milliwatts | 150000 milliwatts |
