STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB140NF55T4 STB140NF55T4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102762-STB140NF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 142nC @ 10V Max Input Capacitance: 5300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102762-STB140NF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 142nC @ 10V Max Input Capacitance: 5300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB140NF55T4 - 1102762-STB140NF55T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB140NF55T4
1102762-STB140NF55T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB140NF55T4 1102762-STB140NF55T4
Manufacturer: STMicroelectronics Win Source Part Number: 1102762-STB140NF55T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 142nC @ 10V Max Input Capacitance: 5300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102762-STB140NF55T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 142nC @ 10V
Max Input Capacitance: 5300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STB140NF55T4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB140NF55T4
Single FETs, MOSFETs STB140NF55T4
MOSFET N-CH 55V 80A D2PAK

MOSFET N-CH 55V 80A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-4321-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4321-1-ND
Single FETs, MOSFETs 497-4321-1-ND
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-4321-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4321-2-ND
Single FETs, MOSFETs 497-4321-2-ND
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-4321-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4321-6-ND
Single FETs, MOSFETs 497-4321-6-ND
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Transistor - 38978706 - Radwell International
Willingboro, NJ, United States
Transistor
38978706
Transistor 38978706
TRANSISTOR, MOSFET, N-CHANNEL, 55V, 80A, 300W, TO-263-3, DPAK. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, N-CHANNEL, 55V, 80A, 300W, TO-263-3, DPAK. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB140NF55T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB140NF55T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB140NF55T4
MOSFET N-CH 55V 80A D2PAK

MOSFET N-CH 55V 80A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 55 Volt 80 Amp

MOSFET N-Ch 55 Volt 80 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102762-STB140NF55T4 STB140NF55T4 497-4321-1-ND 38978706 STB140NF55T4 STB140NF55T4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB140NF55T4 Single FETs, MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts 55 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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