STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB13NK60ZT4 STB13NK60ZT4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031063-STB13NK60ZT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 92nC @ 10V Max Input Capacitance: 2030pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031063-STB13NK60ZT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 92nC @ 10V Max Input Capacitance: 2030pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB13NK60ZT4 - 031063-STB13NK60ZT4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB13NK60ZT4
031063-STB13NK60ZT4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB13NK60ZT4 031063-STB13NK60ZT4
Manufacturer: STMicroelectronics Win Source Part Number: 031063-STB13NK60ZT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 92nC @ 10V Max Input Capacitance: 2030pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031063-STB13NK60ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 92nC @ 10V
Max Input Capacitance: 2030pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-6546-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-6546-2-ND
Single FETs, MOSFETs 497-6546-2-ND
N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-6546-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-6546-6-ND
Single FETs, MOSFETs 497-6546-6-ND
N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-6546-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-6546-1-ND
Single FETs, MOSFETs 497-6546-1-ND
N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore
600V 13A MOSFET Transistor
278-STB13NK60ZT4
600V 13A MOSFET Transistor 278-STB13NK60ZT4
600V 13A N-CH Power MOSFET D2PAK Product overview: STB13NK60ZT4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB13NK60ZT4 can be used for catalog matching and distributor lookup.

600V 13A N-CH Power MOSFET D2PAK Product overview: STB13NK60ZT4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB13NK60ZT4 can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH

MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB13NK60ZT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB13NK60ZT4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB13NK60ZT4
MOSFET N-CH 600V 13A D2PAK

MOSFET N-CH 600V 13A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031063-STB13NK60ZT4 497-6546-2-ND 278-STB13NK60ZT4 STB13NK60ZT4 STB13NK60ZT4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB13NK60ZT4 Single FETs, MOSFETs 600V 13A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 150000 milliwatts 150000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 20 GHz, 400 um Discrete GaAs pHEMT Die - QPD2040D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SB1392C-E - 906329-2SB1392C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
100V 57A MOSFET Transistor - 278-94-2503PBF - ERSAELECTRONICS PTE. LTD.
Specs
Package Type Tube
Packing Method Tube
View Details
3 suppliers
GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details