STMicroelectronics, Inc. FETs - Single - STB13N80K5 STB13N80K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 813174-STB13N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W (Tc) Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 450mOhm at 6A, 10V Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 870pF at 100V Current - Continuous Drain (Id) at 25°C: 12A (Tc) Vgs(th) (Maximum) at Id: 5V at 100μA Part Number Series: STB13N Maximum Vgs: ±30V
  • FETs - Single - STB13N80K5 - 813174-STB13N80K5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-13860-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-13860-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-13860-2-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 800V, 12A, 190W, To-263; Transistor Polarity Stmicroelectronics - 07AH6944 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB13N80K5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 813174-STB13N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W (Tc) Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 450mOhm at 6A, 10V Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 870pF at 100V Current - Continuous Drain (Id) at 25°C: 12A (Tc) Vgs(th) (Maximum) at Id: 5V at 100μA Part Number Series: STB13N Maximum Vgs: ±30V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB13N80K5 - 813174-STB13N80K5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB13N80K5
813174-STB13N80K5
FETs - Single - STB13N80K5 813174-STB13N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 813174-STB13N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 190W (Tc) Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 450mOhm at 6A, 10V Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 870pF at 100V Current - Continuous Drain (Id) at 25°C: 12A (Tc) Vgs(th) (Maximum) at Id: 5V at 100μA Part Number Series: STB13N Maximum Vgs: ±30V

Manufacturer: STMicroelectronics
Win Source Part Number: 813174-STB13N80K5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W (Tc)
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 450mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 870pF at 100V
Current - Continuous Drain (Id) at 25°C: 12A (Tc)
Vgs(th) (Maximum) at Id: 5V at 100μA
Part Number Series: STB13N
Maximum Vgs: ±30V

Buy Now
Single FETs, MOSFETs - 497-13860-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13860-1-ND
Single FETs, MOSFETs 497-13860-1-ND
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13860-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13860-6-ND
Single FETs, MOSFETs 497-13860-6-ND
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13860-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13860-2-ND
Single FETs, MOSFETs 497-13860-2-ND
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Mosfet, N-Ch, 800V, 12A, 190W, To-263; Transistor Polarity Stmicroelectronics - 07AH6944 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 12A, 190W, To-263; Transistor Polarity Stmicroelectronics
07AH6944
Mosfet, N-Ch, 800V, 12A, 190W, To-263; Transistor Polarity Stmicroelectronics 07AH6944
MOSFET, N-CH, 800V, 12A, 190W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 800V, 12A, 190W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB13N80K5
MOSFET STB13N80K5
MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5

MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB13N80K5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB13N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB13N80K5
MOSFET N-CH 800V 12A D2PAK

MOSFET N-CH 800V 12A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 813174-STB13N80K5 497-13860-1-ND 07AH6944 STB13N80K5 STB13N80K5
Product Name FETs - Single - STB13N80K5 Single FETs, MOSFETs Mosfet, N-Ch, 800V, 12A, 190W, To-263; Transistor Polarity Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
QG 29 nC
PD 190000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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