Manufacturer: STMicroelectronics
Win Source Part Number: 813174-STB13N80K5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W (Tc)
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 450mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 870pF at 100V
Current - Continuous Drain (Id) at 25°C: 12A (Tc)
Vgs(th) (Maximum) at Id: 5V at 100μA
Part Number Series: STB13N
Maximum Vgs: ±30V
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 800V, 12A, 190W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5
MOSFET N-CH 800V 12A D2PAK
| Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 813174-STB13N80K5 | 497-13860-1-ND | 07AH6944 | STB13N80K5 | STB13N80K5 |
| Product Name | FETs - Single - STB13N80K5 | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 12A, 190W, To-263; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||
| QG | 29 nC | ||||
| PD | 190000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |