STMicroelectronics, Inc. Single FETs, MOSFETs STB12NM50T4

MOSFET N-CH 550V 12A D2PAK

N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK

500V 12A N-CH MOSFET D2PAK 350mR Product overview: STB12NM50T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB12NM50T4 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 031062-STB12NM50T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 50μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

STMicroelectronics, STB12NM50T4

STMicroelectronics, STB12NM50T4

STMicroelectronics, STB12NM50T4