Manufacturer: STMicroelectronics
Win Source Part Number: 031062-STB12NM50T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 50μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-CH 550V 12A D2PAK
N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK
N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK
N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK
500V 12A N-CH MOSFET D2PAK 350mR Product overview: STB12NM50T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB12NM50T4 can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 12 A, 550 V, 0.3 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 550V 12A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 031062-STB12NM50T4 | STB12NM50T4 | 497-STB12NM50T4DKR-ND | 1888473 | 1888473P | 278-STB12NM50T4 | 99W9702 | STB12NM50T4 | STB12NM50T4 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50T4 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | 500V 12A MOSFET Transistor | Mosfet Transistor, N Channel, 12 A, 550 V, 0.3 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 550 volts | 550 volts | |||||||
| PD | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts | ||||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | -65 C (-85 F) | ||||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2pak | TO-263; TO-263 | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
