STMicroelectronics, Inc. Single FETs, MOSFETs STB11NM80T4

Description
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-STB11NM80T4TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STB11NM80T4TR-ND
Single FETs, MOSFETs 497-STB11NM80T4TR-ND
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-STB11NM80T4DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STB11NM80T4DKR-ND
Single FETs, MOSFETs 497-STB11NM80T4DKR-ND
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-STB11NM80T4CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STB11NM80T4CT-ND
Single FETs, MOSFETs 497-STB11NM80T4CT-ND
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM80T4 - 005205-STB11NM80T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM80T4
005205-STB11NM80T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM80T4 005205-STB11NM80T4
Manufacturer: STMicroelectronics Win Source Part Number: 005205-STB11NM80T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Family Name: STB11NM80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 43.6nC @ 10V Max Input Capacitance: 1630pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): SPB17N80C3T; SPB17N80C3NT; SPB17N80C3XT; Introduction Date: March 23, 1998 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 005205-STB11NM80T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: STB11NM80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 43.6nC @ 10V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): SPB17N80C3T; SPB17N80C3NT; SPB17N80C3XT;
Introduction Date: March 23, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STB11NM80T4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB11NM80T4
Single FETs, MOSFETs STB11NM80T4
MOSFET N-CH 800V 11A D2PAK

MOSFET N-CH 800V 11A D2PAK

Supplier's Site Datasheet
Power Mosfet, N Channel, 5.5 A, 800 V, 0.35 Ohm, 4 V, 4 V Rohs Compliant Stmicroelectronics - 33R1099 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 5.5 A, 800 V, 0.35 Ohm, 4 V, 4 V Rohs Compliant Stmicroelectronics
33R1099
Power Mosfet, N Channel, 5.5 A, 800 V, 0.35 Ohm, 4 V, 4 V Rohs Compliant Stmicroelectronics 33R1099
Power MOSFET, N Channel, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB11NM80T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB11NM80T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB11NM80T4
MOSFET N-CH 800V 11A D2PAK

MOSFET N-CH 800V 11A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 497-STB11NM80T4TR-ND 005205-STB11NM80T4 STB11NM80T4 33R1099 STB11NM80T4
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM80T4 Single FETs, MOSFETs Power Mosfet, N Channel, 5.5 A, 800 V, 0.35 Ohm, 4 V, 4 V Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 800 volts 800 volts
PD 150000 milliwatts 150000 milliwatts
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