N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 005205-STB11NM80T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: STB11NM80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 43.6nC @ 10V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): SPB17N80C3T; SPB17N80C3NT; SPB17N80C3XT;
Introduction Date: March 23, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
800V 11A N-CH MOSFET D2PAK 400mR Rds(on) Product overview: STB11NM80T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB11NM80T4 can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 11A D2PAK
Power MOSFET, N Channel, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 800V 11A D2PAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 497-STB11NM80T4TR-ND | 005205-STB11NM80T4 | 278-STB11NM80T4 | STB11NM80T4 | 33R1099 | STB11NM80T4 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM80T4 | 800V 11A MOSFET Transistor | Single FETs, MOSFETs | Power Mosfet, N Channel, 5.5 A, 800 V, 0.35 Ohm, 4 V, 4 V Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| V(BR)DSS | 800 volts | 800 volts | ||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts |
