600V 11A N-CH MOSFET D2PAK, 450mR Rds(on) Product overview: STB11NM60T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB11NM60T4 can be used for catalog matching and distributor lookup.
N-Channel 650V 11A (Tc) 160W (Tc) Surface Mount D2PAK
N-Channel 650V 11A (Tc) 160W (Tc) Surface Mount D2PAK
N-Channel 650V 11A (Tc) 160W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031060-STB11NM60T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STB11NM60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): FCB11N60; SPB11N60C3; SPB11N60S5E3045;
Introduction Date: May 19, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 11A D2PAK
MOSFET, N CHANNEL, 650V, 11A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 650V 11A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB11NM60T4 | 497-6545-1-ND | 031060-STB11NM60T4 | STB11NM60T4 | 33R1098 | STB11NM60T4 | STB11NM60T4 |
| Product Name | 600V 11A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM60T4 | Single FETs, MOSFETs | Mosfet, N Channel, 650V, 11A, D2Pak; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts | ||||
| TJ | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| V(BR)DSS | 650 volts | 650 volts |
