650V 9A N-CH MOSFET D2PAK, 480mR Rds(on) Product overview: STB11N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB11N65M5 can be used for catalog matching and distributor lookup.
MOSFET N CH 650V 9A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260581-STB11N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Family Name: STB11N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 644pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 85W (Tc)
Rds On (Maximum) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): AOB11S60L; IPB60R30C6; AOB11C60L;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 650V, 9A, 150DEG C, 85W ROHS COMPLIANT: YES
MOSFET N CH 650V 9A D2PAK
MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshM5 710V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB11N65M5 | STB11N65M5 | 1260581-STB11N65M5 | 497-13144-1-ND | 69AH2668 | STB11N65M5 | STB11N65M5 |
| Product Name | 650V 9A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11N65M5 | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 9A, 150Deg C, 85W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 85000 milliwatts | 85000 milliwatts | 85000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts |
