N-Ch MOSFET 100V 80A 8mR D2PAK Product overview: STB100N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB100N10F7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 80A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260572-STB100N10F7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Family Part Number: STB100N10
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 8mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 61nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4369pF at 50V
N-Channel 100V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 80A D2PAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STB100N10F7 | STB100N10F7 | 1260572-STB100N10F7 | 497-14527-2-ND | STB100N10F7 | 61AC2083 | STB100N10F7 |
| Product Name | 100V 80A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STB100N10F7 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 80A, To-263; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts |
