STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SCTWA90N65G2V

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1323980-SCTWA90N65G2 V Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 565W (Tc) Supplier Device Package: TO-247 Long Leads Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 78 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 497-SCTWA90N65G2V Drive Voltage (Max Rds On, Min Rds On): 18V RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323980-SCTWA90N65G2V - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCTWA90N65G2V - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-SCTWA90N65G2V-ND - DigiKey
    DigiKey
  • Mosfet, Sic, N-Ch, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics - 36AJ4505 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1323980-SCTWA90N65G2 V Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 565W (Tc) Supplier Device Package: TO-247 Long Leads Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 78 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 497-SCTWA90N65G2V Drive Voltage (Max Rds On, Min Rds On): 18V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323980-SCTWA90N65G2V - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323980-SCTWA90N65G2V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323980-SCTWA90N65G2V
Manufacturer: STMicroelectronics Win Source Part Number: 1323980-SCTWA90N65G2 V Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 565W (Tc) Supplier Device Package: TO-247 Long Leads Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 78 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 497-SCTWA90N65G2V Drive Voltage (Max Rds On, Min Rds On): 18V RoHS Status: ROHS3 Compliant

Manufacturer: STMicroelectronics
Win Source Part Number: 1323980-SCTWA90N65G2V
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 565W (Tc)
Supplier Device Package: TO-247 Long Leads
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-SCTWA90N65G2V
Drive Voltage (Max Rds On, Min Rds On): 18V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - SCTWA90N65G2V - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCTWA90N65G2V
Single FETs, MOSFETs SCTWA90N65G2V
SILICON CARBIDE POWER MOSFET 650

SILICON CARBIDE POWER MOSFET 650

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-SCTWA90N65G2V-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-SCTWA90N65G2V-ND
Single FETs, MOSFETs 497-SCTWA90N65G2V-ND
N-Channel 650V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads

N-Channel 650V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads

Buy Now Datasheet
Mosfet, Sic, N-Ch, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics - 36AJ4505 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics
36AJ4505
Mosfet, Sic, N-Ch, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics 36AJ4505
MOSFET, SIC, N-CH, 650V, 119A, HIP247 ROHS COMPLIANT: YES

MOSFET, SIC, N-CH, 650V, 119A, HIP247 ROHS COMPLIANT: YES

Supplier's Site
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTWA90N65G2V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTWA90N65G2V
SILICON CARBIDE POWER MOSFET 650

SILICON CARBIDE POWER MOSFET 650

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1323980-SCTWA90N65G2V SCTWA90N65G2V 497-SCTWA90N65G2V-ND 36AJ4505 SCTWA90N65G2V
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, Sic, N-Ch, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
QG 157 nC
PD 565000 milliwatts 565000 milliwatts
TJ -55 to 200 C (-67 to 392 F) -55 to 200 C (-67 to 392 F)
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3 TO-247; TO-247-3
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