STMicroelectronics, Inc. Single FETs, MOSFETs SCTWA60N120G2-4

Description
SILICON CARBIDE POWER MOSFET 120
Request a Quote Datasheet
Description
SILICON CARBIDE POWER MOSFET 120
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCTWA60N120G2-4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCTWA60N120G2-4
Single FETs, MOSFETs SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120

SILICON CARBIDE POWER MOSFET 120

Supplier's Site Datasheet
Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: STMicroelectronics Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Power Dissipation (Max): 388W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4

Manufacturer: STMicroelectronics
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Power Dissipation (Max): 388W (Tc)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4

Buy Now Datasheet
Single FETs, MOSFETs - 497-SCTWA60N120G2-4-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-SCTWA60N120G2-4-ND
Single FETs, MOSFETs 497-SCTWA60N120G2-4-ND
N-Channel 1200V 60A (Tc) 388W (Tc) Through Hole TO-247-4

N-Channel 1200V 60A (Tc) 388W (Tc) Through Hole TO-247-4

Buy Now Datasheet
MOSFET Transistor 278-SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120 Product overview: SCTWA60N120G2-4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA60N120G2-4 can be used for catalog matching and distributor lookup.

SILICON CARBIDE POWER MOSFET 120 Product overview: SCTWA60N120G2-4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA60N120G2-4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Sic, N-Ch, 1.2Kv, 60A, Hip247 Rohs Compliant Stmicroelectronics - 57AJ5663 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 1.2Kv, 60A, Hip247 Rohs Compliant Stmicroelectronics
57AJ5663
Mosfet, Sic, N-Ch, 1.2Kv, 60A, Hip247 Rohs Compliant Stmicroelectronics 57AJ5663
MOSFET, SIC, N-CH, 1.2KV, 60A, HIP247 ROHS COMPLIANT: YES

MOSFET, SIC, N-CH, 1.2KV, 60A, HIP247 ROHS COMPLIANT: YES

Supplier's Site
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTWA60N120G2-4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120

SILICON CARBIDE POWER MOSFET 120

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SCTWA60N120G2-4 497-SCTWA60N120G2-4-ND 278-SCTWA60N120G2-4 57AJ5663 SCTWA60N120G2-4
Product Name Single FETs, MOSFETs Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Transistor Mosfet, Sic, N-Ch, 1.2Kv, 60A, Hip247 Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts 1200 volts
IDSS 60000 milliamps
PD 388000 milliwatts 388000 milliwatts 388 milliwatts
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