SILICON CARBIDE POWER MOSFET 120 Product overview: SCTWA60N120G2-4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA60N120G2-4 can be used for catalog matching and distributor lookup.
N-Channel 1200V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Manufacturer: STMicroelectronics
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Power Dissipation (Max): 388W (Tc)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
MOSFET, SIC, N-CH, 1.2KV, 60A, HIP247 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SCTWA60N120G2-4 | 497-SCTWA60N120G2-4-ND | SCTWA60N120G2-4 | SCTWA60N120G2-4 | 57AJ5663 | |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Sic, N-Ch, 1.2Kv, 60A, Hip247 Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 1200 volts | 1200 volts | ||||
| PD | 388 milliwatts | 388000 milliwatts | 388000 milliwatts | |||
| TJ | -55 to 200 C (-67 to 392 F) | -55 to 200 C (-67 to 392 F) |
